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MRF6VP121KHR6 MRF6VP121KHSR6
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
23
1
0
100
17
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
16
1000 10000
25_C
TC
=--30_C
85_C
20
18
Gps
19
20
21
10
10
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
22
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. MTTF versus Junction Temperature --
128
μsec, 10% Duty Cycle
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 1000 W Peak, Pulse Width = 128
μsec,
Duty Cycle = 10%, and
ηD
= 56%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
108
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature --
Mode--S
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 1000 W Peak, Mode--S Pulse Train,
Pulse Width = 32
μsec, Duty Cycle = 6.4%, and
ηD
= 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
108
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